Improved efficiency in power factor correction circuits with a pn-gated SiCFET

被引：1

作者：

Kelley, Robin ^{[1
]}

Mazzola, Michael S. ^{[1
]}

Draper, William L. ^{[1
]}

机构：

[1] SemiSouth Labs Inc, 200 Res Blvd, Starkville, MS 39759 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

JFET; normally-off power switch;

D O I：

10.4028/www.scientific.net/MSF.556-557.995

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 Omega SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are presented that demonstrate extremely high efficiency at a switching frequency of 500 kHz, the highest operating frequency of the ML4821.

引用

页码：995 / +

页数：2