Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures

被引：2
作者：
Entner, Robert
Grasser, Tibor
Triebl, Oliver
Enichlmair, Hubert
Minixhofer, Rainer
机构：
[1] Vienna Univ Technol, Inst Microelect, Christian Doppler Lab TCAD, A-1040 Vienna, Austria
[2] Austriamicrosyst, A-8141 Unterpremstatten, Austria
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 4-5期
关键词：
D O I：
10.1016/j.microrel.2007.01.078
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature bias instability of high-voltage oxides is analyzed. For the investigation of negative bias temperature instability (NBTI) we present an enhanced reaction-diffusion model including trap-controlled transport, the amphoteric nature of the Pb centers at the Si/SiO2 interface. Fermi-level dependent interface charges, and fully self-consistent coupling to the semiconductor device equations. Comparison to measurement data for a stress/relaxation cycle and a wide range of temperatures shows excellent agreement. (C) 2007 Elsevier Ltd. All rights reserved.
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收藏
页码：697 / 699
页数：3
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