Fast Diffusion of Water Molecules into Chemically Modified SiO2 Films Formed by Chemical Vapor Deposition

被引：0

作者：

Ohtake, Atsushi ^{[1
]}

Kobayashi, Kinya ^{[1
]}

Kurokawa, Syuhei ^{[2
]}

Ohnishi, Osamu ^{[2
]}

Doi, Toshiro ^{[2
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 1018307, Japan

[2] Kyushu Univ, Grad Sch Engn, Dept Mech Engn, Nishi Ku, Fukuoka 8190395, Japan

来源：

CHEMISTRY LETTERS | 2012年 / 41卷 / 01期

关键词：

OXIDATION;

D O I：

10.1246/cl.2012.60

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigated water permeation properties into silicon oxide (SiO2) and chemically modified SiO2 films. The water permeability of fluorinated SiO2 (SiOF) is higher than that of SiO2, indicating that SiOF may have fast diffusion paths constructed from SiO-F structures formed by the breaking of Si-O-Si networks by F atoms. It is suggested that the presence of these fast diffusion paths can explain the reason for the high water permeability of various kinds of SiOF and other low-k films.

引用

页码：60 / 61

页数：2

共 44 条

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