Fast Diffusion of Water Molecules into Chemically Modified SiO2 Films Formed by Chemical Vapor Deposition

被引：0

作者：

Ohtake, Atsushi ^{[1
]}

Kobayashi, Kinya ^{[1
]}

Kurokawa, Syuhei ^{[2
]}

Ohnishi, Osamu ^{[2
]}

Doi, Toshiro ^{[2
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 1018307, Japan

[2] Kyushu Univ, Grad Sch Engn, Dept Mech Engn, Nishi Ku, Fukuoka 8190395, Japan

来源：

CHEMISTRY LETTERS | 2012年 / 41卷 / 01期

关键词：

OXIDATION;

D O I：

10.1246/cl.2012.60

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigated water permeation properties into silicon oxide (SiO2) and chemically modified SiO2 films. The water permeability of fluorinated SiO2 (SiOF) is higher than that of SiO2, indicating that SiOF may have fast diffusion paths constructed from SiO-F structures formed by the breaking of Si-O-Si networks by F atoms. It is suggested that the presence of these fast diffusion paths can explain the reason for the high water permeability of various kinds of SiOF and other low-k films.

引用

页码：60 / 61

页数：2

共 50 条

[1] Effects of Water Desorption from SiO2 Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition
Matsumoto, Kenji
Neishi, Koji
Itoh, Hitoshi
Miyoshi, Hidenori
Sato, Hiroshi
Hosaka, Shigetoshi
Koike, Junichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FA121 - 05FA122
[2] Deposition of SiO2 by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates
Jeong, Chang Hyun
Lee, June Hee
Lim, Jong Tae
Cho, Nam Gil
Moon, Cheol Hee
Yeom, Geun Young
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (02): : 1022 - 1026
[3] Deposition of SiO2 by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates
Jeong, CH
Lee, JH
Lim, JT
Cho, NG
Moon, CH
Yeom, GY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (02): : 1022 - 1026
[4] Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition
Kato, H
Sakai, S
Takami, A
Ohki, Y
Ishii, K
PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL CONFERENCE ON CONDUCTION AND BREAKDOWN IN SOLID DIELECTRICS - ICSD '98, 1998, : 368 - 371
[5] Deposition of SiO2 films on strained SiGe layer by direct photo chemical vapor deposition
Lin, Chung-Te
Chang, Shoou-Jinn
Nayak, Deepok K.
Shiraki, Yasuhiro
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (01): : 72 - 74
[6] AFTERGLOW CHEMICAL VAPOR-DEPOSITION OF SIO2
JACKSON, RL
SPENCER, JE
MCGUIRE, JL
HOFF, AM
SOLID STATE TECHNOLOGY, 1987, 30 (04) : 107 - 111
[7] Chemical vapor deposition of Ge nanocrystals on SiO2
Baron, T
Pelissier, B
Perniola, L
Mazen, F
Hartmann, JM
Rolland, G
APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1444 - 1446
[8] DIGITAL CHEMICAL VAPOR-DEPOSITION OF SIO2
NAKANO, M
SAKAUE, H
KAWAMOTO, H
NAGATA, A
HIROSE, M
HORIIKE, Y
APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1096 - 1098
[9] Preparation of low-K porous SiO2 films by SiO2/organic hybrid chemical vapor deposition
Fujimoto, A
ADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000), 2001, : 653 - 658
[10] Chemical vapor deposition of SiO2 films by TEOS/O2 supermagnetron plasma
Kinoshita, H
Murakami, T
Fukushima, F
VACUUM, 2004, 76 (01) : 19 - 22

← 1 2 3 4 5 →