First-principle calculations on gate/dielectric interfaces:: on the origin of work function shifts

被引:31
作者
Pourtois, G
Lauwers, A
Kittl, J
Pantisano, L
Sorée, B
De Gendt, S
Magnus, W
Heyns, A
Maex, K
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Texas Instruments Inc, Dallas, TX 75265 USA
[3] Katholieke Univ Leuven, EE Dept, Louvain, Belgium
[4] Katholieke Univ Leuven, Dept Chem, Louvain, Belgium
[5] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium
关键词
work function; Fermi level pinning; DFT; nickel monosilicide;
D O I
10.1016/j.mee.2005.04.080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
引用
收藏
页码:272 / 279
页数:8
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