Photoinduced Surface Oxidation and Its Effect on the Exciton Dynamics of CdSe Quantum Dots

With increased interest in semiconductor nanoparticles for use in quantum dot solar cells there comes a need to understand the long-term photostability of such materials. Colloidal CdSe quantum dots (QDs) were suspended in toluene and stored in combinations of light/dark and N-2/O-2 to simulate four possible benchtop storage environments. CdSe QDs stored in a dark, oxygen-free environment were observed to better retain their optical properties over the course of 90 days. The excited state lifetimes, determined through femtosecond transient absorption spectroscopy, of air-equilibrated samples exposed to light exhibit a decrease in average lifetime (0.81 ns) when compared to samples stored in a nitrogen/dark environment (8.3 ns). A photoetching technique commonly used for controlled reduction of QD size was found to induce energetic trap states to CdSe QDs and accelerate the rate of electron hole recombination. X-ray absorption near edge structure (XANES) analysis confirms surface oxidation, the extent of which is shown to be dependent on the thickness of the ligand shell.