A percolative approach to degradation of thin films for reliability of electronic devices

被引：0

作者：

Pennetta, C ^{[1
]}

Reggiani, L ^{[1
]}

Trefán, G ^{[1
]}

机构：

[1] Univ Lecce, Dipartimento Ingn Innovazione, I-73100 Lecce, Italy

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A degrading thin film in the presence of an electrical stress is modelled by a two dimensional random resistor network subjected to dynamical percolation. Depending on model parameters the film can exhibit electrical breakdown or reach a steady dynamic defectiveness exhibiting excess resistance noise. The model is proven to reproduce key experimental results concerning soft dielectric breakdown in ultrathin oxide and also electromigration damage of IC interconnects.

引用

页码：1763 / 1764

页数：2

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