Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

被引：3

作者：

Xia, Y. ^{[1
,2
]}

Brault, J. ^{[1
]}

Nemoz, M. ^{[1
]}

Teisseire, M. ^{[1
]}

Vinter, B. ^{[1
,2
]}

Leroux, M. ^{[1
]}

Chauveau, J. -M. ^{[1
,2
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

[2] Univ Nice Sophia Antipolis, F-06103 Nice, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

LIGHT-EMITTING-DIODES; HIGH-POWER; GAN; FIELDS; SAPPHIRE; FILMS;

D O I：

10.1063/1.3673325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar (11 (2) over bar0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (11 (2) over bar0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673325]

引用

页数：3

共 49 条

[1] Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
Natali, F.
Cordier, Y.
Chaix, C.
Bouchaib, P.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2029 - 2032
[2] Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy
Auzelle, T.
Sinito, C.
Laehnemann, J.
Gao, G.
Flissikowski, T.
Trampert, A.
Fernandez-Garrido, S.
Brandt, O.
PHYSICAL REVIEW APPLIED, 2022, 17 (04)
[3] Effect of Al and N codoping on the optical properties of Zn1-xMgxO
Liu Qiang
Cheng Xin-Lu
Li De-Hua
Yang Ze-Jin
ACTA PHYSICA SINICA, 2010, 59 (12) : 8829 - 8835
[4] A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Kundys, Dmytro
Sutherland, Danny
Davies, Matthew J.
Oehler, Fabrice
Griffiths, James
Dawson, Philip
Kappers, Menno J.
Humphreys, Colin J.
Schulz, Stefan
Tang, Fengzai
Oliver, Rachel A.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) : 736 - 743
[5] Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
Huang, Huei-Min
Ling, Shih-Chun
Chan, Wei-Wen
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (08) : 1101 - 1106
[6] Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
Rosales, Daniel
Gil, Bernard
Bretagnon, Thierry
Brault, Julien
Vennegues, Philippe
Nemoz, Maud
de Mierry, Philippe
Damilano, Benjamin
Massies, Jean
Bigenwald, Pierre
JOURNAL OF APPLIED PHYSICS, 2015, 118 (02)
[7] Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy
Kim, Jongmin
Song, Keun Man
Bae, Seong Ju
Shin, Chan Soo
Ko, Chul Gi
Kong, Bo Hyun
Cho, Hyung Koun
JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) : 36 - 40
[8] Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
Chiu, C. H.
Kuo, S. Y.
Lo, M. H.
Ke, C. C.
Wang, T. C.
Lee, Y. T.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
[9] Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy
Lotsari, A.
Kehagias, Th.
Tsiakatouras, G.
Tsagaraki, K.
Katsikini, M.
Arvanitidis, J.
Christofilos, D.
Ves, S.
Komninou, Ph.
Georgakilas, A.
Dimitrakopulos, G. P.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (21)
[10] Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
Blumenthal, Sarah
Reuter, Dirk
As, Donat J.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (05):

← 1 2 3 4 5 →