Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption

被引：35

作者：

Choi, Soojeong ^{[1
]}

Kim, Tong-Ho ^{[2
]}

Wolter, Scott ^{[2
]}

Brown, April ^{[2
]}

Everitt, Henry O. ^{[1
,2
]}

Losurdo, Maria ^{[3
]}

Bruno, Giovanni ^{[3
]}

机构：

[1] Duke Univ, Dept Phys, Durham, NC 27708 USA

[2] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[3] CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.77.115435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium kinetics and evidence for indium segregation on the GaN (0001) surface are investigated via in situ spectroscopic ellipsometry. Indium deposition exhibits two stable states at coverages of 1.0 and 1.7 ML within the temperature range of 630-688 degrees C. Formation of each layer is governed by two kinetic processes: nuclei formation and nuclei-mediated layer adsorption. The measured desorption activation energies of nuclei of the first (2.04 eV) and second (2.33 eV) monolayers are lower than the desorption activation energies of the aggregated first (2.64 eV) and second (2.53 eV) monolayers, respectively. This suggests that adatoms preferentially interact with the nuclei and laterally aggregate.

引用

页数：7

共 16 条

[1] Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces [J].