Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications

被引：2

作者：

Chromik, S. ^{[1
]}

Spankova, M. ^{[1
]}

Talacko, M. ^{[1
]}

Dobrocka, E. ^{[1
]}

Lalinsky, T. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

来源：

APPLIED SURFACE SCIENCE | 2018年 / 461卷

关键词：

BTO films; Dielectric films; LSMO film; Surface morphology; THIN-FILMS; ORIENTATION;

D O I：

10.1016/j.apsusc.2018.06.059

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We discuss properties of Bi4Ti3O12 (BTO) films in BTO/CeO2/YSZ multilayered buffer system, on silicon and on silicon-on-insulator (SOI) substrates, employed for the preparation of epitaxial La0.67Sr0.33MnO3 (LSMO) films. We try to find a correlation between the parameters of film preparation and structural properties and morphology of the BTO films with the goal to eliminate defects. We also point out that many morphological defects observed on the final LSMO films prepared for bolometers originate in the bottom BTO layer. We have found out that the actual substrate temperature is a very important parameter during the process of BTO film deposition since deviations of only few degrees from the proper temperature can cause the growth of mixture crystal orientation.

引用

页码：39 / 43

页数：5

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