Compensation mechanism in silicon-doped gallium arsenide nanowires

被引：45

作者：

Ketterer, B. ^{[1
]}

Mikheev, E. ^{[1
]}

Uccelli, E. ^{[1
,2
,3
]}

Fontcuberta i Morral, A. ^{[1
,2
,3
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Mat, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[2] Tech Univ Munich, Walter Scottky Inst, D-85748 Garching, Germany

[3] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

关键词：

GAAS;

D O I：

10.1063/1.3517254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4 x 10(18) cm(-3), silicon incorporates mainly in arsenic sites. For higher concentrations, we observe the formation of silicon pairs. This is related to the Coulomb interaction between charged defects during growth. An electrical deactivation of more than 85% of the silicon acceptors is deduced for nominal silicon concentration of 4 x 10(19) cm(-3). This work is important to understand the limiting mechanisms of doping in compound semiconductor nanowires. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517254]

引用

页数：3

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