InGaN-based multi-quantum-well-structure laser diodes

被引：1847

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Kiyoku, H

Sugimoto, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 1B期

关键词：

InGaN; laser diode; multi-quantum-well structure; Ill-V nitride; etching;

D O I：

10.1143/JJAP.35.L74

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm(2). The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

引用

页码：L74 / L76

页数：3

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