A power combined W-band HBT oscillator

被引：0
|
作者：
Uchida, K [1 ]
Matsuura, H [1 ]
Yakihara, T [1 ]
Kobayashi, S [1 ]
Oka, S [1 ]
Fujita, T [1 ]
Miura, A [1 ]
机构：
[1] Teratec Corp, Musashino, Tokyo 1808750, Japan
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the development of a power combined W-band heterojunction bipolar transistor (HBT) oscillator is reported. The oscillation frequency is 105.9 GHz, and the output power is +0.6 dBm, with a phase noise of -88 dBc/Hz at 1 MHz offset. We believe this is the first report of a W-band fundamental mode power combined oscillator.
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收藏
页码：51 / 54
页数：4
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