High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates

被引：79

作者：

Raring, James W. ^{[1
]}

Schmidt, Mathew C. ^{[1
]}

Poblenz, Christiane ^{[1
]}

Chang, Yu-Chia ^{[1
]}

Mondry, Mark J. ^{[1
]}

Li, Ben ^{[1
]}

Iveland, Justin ^{[1
]}

Walters, Brianna ^{[1
]}

Krames, Michael R. ^{[1
]}

Craig, Richard ^{[1
]}

Rudy, Paul ^{[1
]}

Speck, James S. ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Nakamura, Shuji ^{[1
]}

机构：

[1] Soraa Inc, Goleta, CA 93117 USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 11期

关键词：

D O I：

10.1143/APEX.3.112101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using non-c-plane bulk GaN substrates, we demonstrate continuous-wave single-mode blue-emitting laser diodes operating with over 23% wall plug efficiency and over 750mW output power, which represent the highest values reported to date. Furthermore, we demonstrate continuous-wave 520nm green-emitting laser diodes with over 60mW output power and 1.9% wall plug efficiency. The rapid performance evolution of laser diodes fabricated on non-c-plane orientations is validation of the benefits resulting from increased electron-hole overlap, reduced effective hole mass, and increased design flexibility. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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