Growth of graphene on copper and nickel foils via chemical vapour deposition using ethylene

被引：11
作者：
Sagar, R. R. [1 ,2 ]
Zhang, X. [1 ,2 ]
Xiong, C. [1 ,2 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
[2] Beijing Natl Ctr Electron Microscopy, Beijing 100084, Peoples R China
来源：
MATERIALS RESEARCH INNOVATIONS | 2014年 / 18卷
基金：
中国国家自然科学基金;
关键词：
Graphene; Ethylene; Chemical vapour deposition; Pressure effect; CARBON; TRANSPORT; COMPOSITE;
D O I：
10.1179/1432891714Z.000000000771
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Graphene was grown on copper and nickel foils via chemical vapour deposition (CVD), using ethylene (C2H4) as a precursor instead of methane (CH4). Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) results confirmed that ethylene can be used in the growth of graphene. The effect of ethylene pressure on graphene growth was also observed. This study's results show that graphene can be grown on copper and nickel foils under the same growth conditions of CVD if ethylene is used as a precursor.
引用
收藏
页码：706 / 710
页数：5
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