Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics

被引：1

作者：

Zhang, Yanjie ^{[1
]}

Xu, Zhijun ^{[1
]}

Chu, Ruiqing ^{[1
]}

Hao, Jigong ^{[1
]}

Li, Guorong ^{[2
]}

Yin, Qingrui ^{[2
]}

Zhu, Peiying ^{[1
]}

Wu, Xin ^{[1
]}

Lu, Qingjun ^{[1
]}

Ding, Lei ^{[1
]}

机构：

[1] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng 252059, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

CHINESE CERAMICS COMMUNICATIONS | 2010年 / 105-106卷

基金：

中国国家自然科学基金;

关键词：

Bismuth layer structure; Ferroelectric; Dielectric; Sr2Bi(4-x/3) Ti(5-x) VxO18; LARGE REMANENT POLARIZATION; PIEZOELECTRIC PROPERTIES; TITANATE;

D O I：

10.4028/www.scientific.net/AMR.105-106.245

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sr2Bi(4-x/3) Ti(5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d(33) = 19 pC/N, T-c = 306 degrees C, E-c = 43.7 KV/cm.

引用

页码：245 / +

页数：2

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