Quantum Hall charge sensor for single-donor nuclear spin detection in silicon

被引：7

作者：

Sleiter, D. ^{[1
]}

Kim, N. Y. ^{[1
,2
]}

Nozawa, K. ^{[3
]}

Ladd, T. D. ^{[1
,4
]}

Thewalt, M. L. W. ^{[5
]}

Yamamoto, Y. ^{[1
,4
]}

机构：

[1] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[3] Panasonic Corp, Nanotechnol Res Lab, Adv Technol Res Labs, Seika, Kyoto 6190237, Japan

[4] Natl Inst Informat, Chiyoda Ku, Tokyo 1018403, Japan

[5] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

NEW JOURNAL OF PHYSICS | 2010年 / 12卷

关键词：

ELECTRON SPIN; OPTICAL PULSES; RESONANCE; EXCITONS; IONIZATION; SYSTEMS; STATES; FIELD; ATOM; DOT;

D O I：

10.1088/1367-2630/12/9/093028

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can offer both nuclear spin measurement and robustness against environmental defects. (31)P donor spins in isotopically purified (28)Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.

引用

页数：17

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