Free-carrier absorption in nitrides from first principles

被引：129

作者：

Kioupakis, Emmanouil ^{[1
]}

Rinke, Patrick ^{[1
]}

Schleife, Andre ^{[1
,2
]}

Bechstedt, Friedhelm ^{[2
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 24期

关键词：

DISPERSION;

D O I：

10.1103/PhysRevB.81.241201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a computationally-tractable first-principles approach (based on density-functional and many-body perturbation theories) to treat the indirect absorption of light by free carriers in semiconductors and insulators and applied it to the technologically important class of group-III nitrides. Indirect absorption by free and impurity-bound carriers, mediated by electron-phonon, charged-defect, and alloy scattering, is an important loss mechanism which may explain the origin of the observed absorption loss in nitride laser devices. The electron-phonon interaction is calculated entirely from first principles, allowing us to validate the commonly used Frohlich approximation. The formalism is quite general and can be applied to other cases where carrier-induced absorption is a concern, such as in transparent conducting oxides.

引用

页数：4

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