On the Capacitance of Piezoelectric Metal-Insulator-Semiconductor Junctions

被引：0

作者：

Yang, Lei ^{[1
]}

Du, Jianke ^{[1
]}

Wang, Ji ^{[1
]}

Yang, Jiashi ^{[2
]}

机构：

[1] Ningbo Univ, Sch Mech Engn & Mech, Piezoelect Device Lab, Ningbo, Zhejiang, Peoples R China

[2] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA

来源：

FERROELECTRICS LETTERS SECTION | 2021年 / 48卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

Piezoelectric; insulator; semiconductor; capacitance; piezotronic; PIEZO-PHOTOTRONICS; ZNO NANOWIRE; PIEZOTRONICS; WAVES; PERFORMANCE; FIELDS;

D O I：

10.1080/07315171.2021.1923115

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the capacitance of piezoelectric metal-insulator-semiconductor junctions. The linearized macroscopic theories of piezoelectric dielectrics and semiconductors are used. An analytical solution is obtained with an explicit expression for the junction capacitance. The contribution from the semiconductor part is characterized by the Debye length. When the semiconductor part is long compared to the Debye length, the junction capacitance can be written as a serial connection of two capacitors of the insulator and semiconductor parts. Because of piezoelectric coupling, a charge-stress coefficient is introduced to describe the junction behavior completely.

引用

页码：1 / 12

页数：12

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