Thin films of FexNi1-x electroplated on silicon (100)

被引：27

作者：

Spada, E. R.

de Oliveira, L. S.

da Rocha, A. S.

Pasa, A. A.

Zangari, G.

Sartorelli, M. L.

机构：

[1] Univ Fed Santa Catarina, CFM, Dept Fis, BR-88040900 Florianopolis, SC, Brazil

[2] Univ Virginia, Mat Sci & Engn CESE, Charlottesville, VA 22904 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

Fe-Ni; Electrodeposition; semiconductor substrate; AMR; stripe domains;

D O I：

10.1016/j.jmmm.2003.12.218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

FexNi1-x thin films were electroplated in the constant current mode directly onto n-type Si (100) using saccharin as a leveller agent. Fe content varied between 7 and 20 at%. Current efficiency increased with current density and also with film thickness, ranging from 35% to 76%. Films with a nominal thickness of 2800 nm showed a magnetoresistance of 3.6% and a coercive field of 3.5 Oe for deposits grown at 12.6 mA/cm(2). F or x <20; magnetization curves displayed a skewed shape, characteristic of a stripe domain configuration perpendicular to the plane of the film. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：E891 / E892

页数：2

共 7 条

[1]

ANDRICACOS PC, 1994, ADV ELEC SC, V3, P227

[2] ELECTRODEPOSITION AND CHARACTERIZATION OF MAGNETIC NI-FE THIN-FILMS ON INP(100) SURFACES [J].