Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases

被引：6

作者：

Hou, Weiwei ^{[1
]}

Wang, Jianyu ^{[1
]}

Wang, Zhendong ^{[1
]}

Cao, Kai ^{[1
]}

Qin, Liyun ^{[1
]}

Wang, Li ^{[1
]}

机构：

[1] Nanchang Univ, Dept Phys, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China

来源：

CRYSTENGCOMM | 2020年 / 22卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SHAPE;

D O I：

10.1039/c9ce01751h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A method to grow few-layer graphene in the form of an "inverted pagoda" is proposed by controlling the pressure and the flow rate in a circulating chemical vapor deposition system. Such single-crystal few-layer graphene consists of one- to eight-layer graphene areas exhibiting layer growth characteristics. Moreover, each layer within this kind of few-layer graphene is in Bernal stacking. In this work, with increasing growth pressure, the self-limiting effect of graphene was successfully overcome, and the growth of graphene in the vertical direction was achieved. By controlling the ratio of H-2/CH4, the morphology and the number of layers of the multilayer graphene under the single-layer graphene were modulated.

引用

页码：1018 / 1023

页数：6