Copper diffusion in TaN-based thin layers

被引：25

作者：

Nazon, J. ^{[2
]}

Fraisse, B. ^{[1
]}

Sarradin, J. ^{[2
]}

Fries, S. G. ^{[3
]}

Tedenac, J. C. ^{[2
]}

Frety, N. ^{[2
]}

机构：

[1] Ecole Cent Paris, Lab Struct Proprietes & Modelisat Solides, UMR 8580, F-92295 Chatenay Malabry, France

[2] Univ Montpellier 2, CNRS, Inst Charles Gerhardt, UMR 5253,UM2,ENSCM,UM1, F-34095 Montpellier 5, France

[3] SGF Sci Consultancy, D-52064 Aachen, Germany

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 18期

关键词：

tantalum nitride; reactive sputtering; microstructure; diffusion; in situ glancing analysis;

D O I：

10.1016/j.apsusc.2008.03.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：5670 / 5674

页数：5

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