A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

被引：82

作者：

Choi, Sangmoo ^{[1
]}

Fuentes-Hernandez, Canek ^{[1
]}

Wang, Cheng-Yin ^{[1
]}

Khan, Talha M. ^{[1
]}

Larrain, Felipe A. ^{[1
]}

Zhang, Yadong ^{[2
]}

Barlow, Stephen ^{[2
]}

Marder, Seth R. ^{[2
]}

Kippelen, Bernard ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Chem & Biochem, COPE, Atlanta, GA 30332 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 37期

关键词：

organic field-effect transistors; TIPS-pentacene/PTAA; contact resistance; contact doping molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolend molybdenum trioxide; top-gate geometry; Fermi-level pinning; THIN-FILM TRANSISTORS; MOLYBDENUM DITHIOLENE COMPLEX; SELF-ASSEMBLED MONOLAYERS; CHARGE-CARRIER INJECTION; THRESHOLD VOLTAGE; GATE DIELECTRICS; HIGH-PERFORMANCE; P-DOPANTS; SEMICONDUCTOR; COPOLYMERS;

D O I：

10.1021/acsami.6b07029

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the reduction of contact resistance in solution-processed TIPS-pentacene (6,13-bis(tridsopropylsilylethynyl)pentacene) and PTAA (poly[bis(4phenyl)(2,4,6-trimethylphenyl)amine]) top-gate bottom-contact organic field-effect transistors (OFETs) by using different contact-modification strategies. The study compares the contact resistance values in devices that comprise Au source/ drain electrodes either treated with 2,3,4,5,6-pentafluorothiophenol (PFBT), or modified with an evaporated thin layer of the metal organic molecular dopant molybdenum tris-[1,2bis (triflu o r methyl) eth a ne- 1,2- dithiol e n e] (Mo(tfd)3), or modified with a thin layer of the oxide Mo03. An improved performance is observed in devices modified with Mo(tfd)3 or Mo03 as compared to devices in which Au electrodes are modified with PFBT. We discuss the origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes.

引用

页码：24744 / 24752

页数：9

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