Mg-doped InN and InGaN - Photoluminescence, capacitance-voltage and thermopower measurements

被引：58

作者：

Ager, J. W., III ^{[1
]}

Miller, N. ^{[1
,2
]}

Jones, R. E. ^{[1
,2
]}

Yu, K. M. ^{[1
]}

Wu, J. ^{[1
,2
]}

Schaff, W. J. ^{[3
]}

Walukiewicz, W. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Cornell Univ, Dept Elect Engn & Comp Sci, Ithaca, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 05期

关键词：

D O I：

10.1002/pssb.200778731

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The bandgap range of InGaN extends from the near-IR (InN, 0:65 eV) to the ultraviolet. To exploit this wide tuning range in light generation and conversion applications, pn junctions ate required. The large electron affinity of InN (5.8 eV) leads to preferential formation of native donor defects, resulting, in excess electron concentration in the bulk and at surfaces and interfaces. This creates difficulties for p-type doping and/or measuring of the bulk p-type activity. Capacitance-voltage measurements; which deplete the n-type surface inversion layer, have been used to show that Mg is an active acceptor in InN and InxGa1-xN for 0.2 < x < 1.0, i.e. over the entire composition range. Mg acceptors can be compensated by irradiation-induced native donors. Thermopower measurements were used to provide definitive evidence that Mg-doped InN has mobile holes between 200 K end 300 K. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：873 / 877

页数：5

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