Optical properties of Se80Te20 thin films during amorphous-crystalline transition

被引:0
作者
Sudha, A [1 ]
Raghavan, KS [1 ]
Vaya, PR [1 ]
机构
[1] Indian Inst Technol, Dept Met Engn, Madras 600036, Tamil Nadu, India
来源
PROCESSING AND FABRICATION OF ADVANCED MATERIALS V | 1996年
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暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin films of amorphous Se80Te20 alloys with thicknesses ranging from 200 to 300 nm were prepared by vacuum deposition. The as-grown films were annealed in argon atmosphere at different temperatures for different periods of time. The transition from amorphous to crystalline state has been characterized through different degrees of crystallinity using techniques of x/ray and electron diffractions. The optical constants for all films, viz., refractive index (n), extinction coefficient (k), absorption coefficient (alpha) and band gap (E-g) were calculated from the transmission spectra recorded in the wavelength region 400-1900 nm. For the amorphous films, the refractive index increases in the U-V region, but it remains almost constant in the annealed films. The extinction coefficient for the amorphous films remains constant in the transparent region, then decreases slightly in the visible region and then increases towards the U-V region. In the annealed thin films, the extinction coefficient decreases towards the smaller wavelength. The absorption coefficient increases towards the smaller wavelength in the amorphous thins films, whereas in annealed thin films, it decreases. The variation in physical properties seems to indicate applications in switching devices.
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页码:535 / 542
页数:8
相关论文
共 14 条
[1]   STUDIES OF STRUCTURAL RELAXATION AND CRYSTALLIZATION KINETICS OF SE-X TE-1-X AMORPHOUS SYSTEM BY DTA MEASUREMENTS [J].
ABOUELELA, AH ;
ELMOUSLY, MK ;
ABDU, KS .
JOURNAL OF MATERIALS SCIENCE, 1980, 15 (04) :871-874
[2]  
ADACHI H, 1980, J APPL PHYS, V51, P6323
[3]   DEPENDENCE OF OPTICAL BAND-GAP ON THE COMPOSITIONS OF SE(1-X)TEX THIN-FILMS [J].
ELZAHED, H ;
KHALED, MA ;
ELKORASHY, A ;
YOUSSEF, SM ;
ELOCKER, M .
SOLID STATE COMMUNICATIONS, 1994, 89 (12) :1013-1016
[4]  
Lakshmi P., 1992, Materials and Manufacturing Processes, V7, P113, DOI 10.1080/10426919208947401
[5]   CRYSTALLIZATION OF AMORPHOUS SE80TE20 ALLOY THIN-FILMS [J].
LAKSHMI, P ;
RAGHAVAN, KS .
THIN SOLID FILMS, 1990, 193 (1-2) :1073-1078
[6]   OPTICAL + ELECTRICAL PROPERTIES OF SELENIUM-TELLURIUM ALLOYS [J].
LANYON, HPD .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1516-&
[7]   SIMPLE METHOD FOR DETERMINATION OF OPTICAL-CONSTANTS N,K AND THICKNESS OF A WEAKLY ABSORBING THIN-FILM [J].
MANIFACIER, JC ;
GASIOT, J ;
FILLARD, JP .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1976, 9 (11) :1002-1004
[8]   ELECTRICAL TRANSPORT IN AMORPHOUS TEXSE1-X FILMS [J].
MEHRA, RM ;
AGARWAL, SC ;
RANI, S ;
SHYAM, R ;
AGARWAL, SK ;
MATHUR, PC .
THIN SOLID FILMS, 1980, 71 (01) :71-77
[9]   SUBLINEAR AND SUPERLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS SE1-XTEX FILMS [J].
NODA, M ;
CHOW, L ;
KAO, KC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (08) :1345-1355
[10]   OPTICAL-PROPERTIES OF RF REACTIVE SPUTTERED TIN-DOPED IN2O3 FILMS [J].
OHHATA, Y ;
SHINOKI, F ;
YOSHIDA, S .
THIN SOLID FILMS, 1979, 59 (02) :255-261