Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

被引：16

作者：

Rim, You Seung ^{[1
]}

Kim, Dong Lim ^{[1
]}

Jeong, Woong Hee ^{[1
]}

Kim, Si Joon ^{[1
]}

Kim, Bo Sung ^{[2
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Samsung Elect Co Ltd, LCD R&D Ctr, Yongin 446711, Gyeonggi Do, South Korea

来源：

CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 01期

关键词：

Oxide TFTs; Oxide semiconductor; Sol-gel process; Thin-film transistor; ACTIVE CHANNEL LAYER; OPTICAL BAND-GAP; OXIDE-FILMS; PERFORMANCE; ZNO;

D O I：

10.1016/j.cap.2010.11.096

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 degrees C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S. S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 degrees C were 4.02 cm(2) V-1 s(-1), 0.94 V/decade, 3.13 V, and >10(6), respectively. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：S258 / S261

页数：4

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