Growth and characterization of graded AlCaN conducting buffer layers on n+ SiC substrates

被引：17

作者：

Moran, B ^{[1
]}

Hansen, M ^{[1
]}

Craven, MD ^{[1
]}

Speck, JS ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷

关键词：

conducting buffer; GaN; AlGaN; SiC; graded; MOCVD;

D O I：

10.1016/S0022-0248(00)00704-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN films on top of doped, graded AlGaN conducting buffer layers were grown by metal-organic chemical vapor deposition on n(+) SiC substrates. The effect of initial AlGaN composition and buffer layer doping level on the structural and morphological properties of these films and the conduction between these films and the substrate was investigated. A minimum resistance of 2 Omega was measured for vertical test structures, (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：301 / 304

页数：4

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