On the study of microstructure of annealed C+ and H2+ Co-implanted 6H-SiC

被引：3

作者：

Ye, Chao ^{[1
]}

Ran, Guang ^{[1
]}

Zhou, Wei ^{[2
]}

Feng, Qijie ^{[2
]}

Huang, Jingchi ^{[1
]}

Li, Ning ^{[1
]}

机构：

[1] Xiamen Univ, Coll Eneryy, Xiamen 361102, Fujian, Peoples R China

[2] China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China

来源：

PROGRESS IN NUCLEAR ENERGY | 2020年 / 118卷

基金：

中国国家自然科学基金;

关键词：

SiC; Ion irradiation; Surface morphology; Microstructure; Annealing; AMORPHOUS-SILICON CARBIDE; INTERSTITIAL ATOMS; ION; RECRYSTALLIZATION; RAMAN; HE;

D O I：

10.1016/j.pnucene.2019.103143

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The microstructure of annealed single crystal 6H-SiC implanted with C+ and H-2(+) ions were characterized by glancing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After annealing, cracks were observed to form in the surface of C+ ions implanted sample. However, blisters as circular clusters were observed in the surface of the H-2(+) ions implanted and annealed sample. Compared with the samples implanted with only single type of ions, both cracks and blisters with different morphologies were found to appear in the surface of C+ and H-2(+) ions co-implanted sample. The morphology and distribution of blisters and exfoliations in the C+ and H-2(+) co-implanted samples were more irregular and inhomogeneous than those in the HI ions implanted sample, which can be attributed to the randomly distributed columnar crystals formed during the annealing process. The grain boundaries of these columnar crystals could be used as migration channels for hydrogen, which influence the size evolution of blisters and exfoliations in the sample surface during annealing process.

引用

页数：7

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