Experimental demonstration of magnetoplasmon polariton at InSb(InAs)/dielectric interface for terahertz sensor application

被引：40

作者：

Chochol, Jan ^{[1
,2
]}

Postava, Kamil ^{[1
,3
]}

Cada, Michael ^{[2
]}

Pistora, Jaromir ^{[1
]}

机构：

[1] VSB Tech Univ Ostrava, Nanotechnol Ctr, 17 Listopadu 15-2172, Ostrava 70833, Poruba, Czech Republic

[2] Dalhousie Univ, Dept Elect & Comp Engn, 6299 South St, Halifax, NS B3H 4R2, Canada

[3] VSB Tech Univ Ostrava, Dept Phys, 17 Listopadu 15-2172, Ostrava 70833, Poruba, Czech Republic

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

SURFACE-PLASMON RESONANCE; MODES;

D O I：

10.1038/s41598-017-13394-0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We experimentally demonstrate surface plasmon resonance (SPR) in the terahertz range in InSb and InAs. The surface plasmon is excited on the interface between a thin polymer film and the semiconductor using a silicon prism in Otto configuration. The low effective mass of InSb and InAs permits tuning of the SPR by an external magnetic field in the transversal configuration. The data show a good agreement with a model. Strong excitation of the surface plasmon is present in both materials, with a shifting of resonance position by more than 100 GHz for the field of 0.25 T, to both higher and lower energies with opposite orientation of the magnetic field. Applicability of the terahertz SPR sensor is discussed, along with modeled design for the Kretschmann configuration.

引用

页数：8

共 26 条

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