Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

被引:11
作者
Agocs, E. [1 ,2 ]
Petrik, P. [1 ]
Milita, S. [3 ]
Vanzetti, L. [4 ]
Gardelis, S. [5 ]
Nassiopoulou, A. G. [5 ]
Pucker, G. [4 ]
Balboni, R. [3 ]
Fried, M. [1 ]
机构
[1] Res Inst Tech Phys & Mat Sci, H-1121 Budapest, Hungary
[2] Univ Pannonia, H-8200 Veszprem, Hungary
[3] CNR, IMM Sez Bologna, I-40129 Bologna, Italy
[4] Fdn Bruno Kessler, I-38100 Trento, Italy
[5] NCSR Demokritos, IMEL, Athens 15310, Greece
基金
匈牙利科学研究基金会;
关键词
Ellipsometry; Nanocrystal; Effective medium approximation; MDF; Generalized critical point; GCP; CHEMICAL-VAPOR-DEPOSITION; SPECTROSCOPIC ELLIPSOMETRY; THIN-FILMS; GROWTH;
D O I
10.1016/j.tsf.2010.11.072
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO(2) layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been revealed as a function of annealing of the SRO superlattices. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:3002 / 3005
页数:4
相关论文
共 21 条
[1]   DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA ;
KINSBRON, E .
PHYSICAL REVIEW B, 1984, 29 (02) :768-779
[2]  
Collins R.W., 2005, HDB ELLIPSOMETRY, P93, DOI DOI 10.1016/B978-081551499-2.50004-6
[3]  
COLLINS RW, 2005, HDB ELLIPSOMETRY, P195
[4]   OPTICAL-PROPERTIES OF ION-IMPLANTED GAAS - THE OBSERVATION OF FINITE-SIZE EFFECTS IN GAAS MICROCRYSTALS [J].
FENG, GF ;
ZALLEN, R .
PHYSICAL REVIEW B, 1989, 40 (02) :1064-1073
[5]  
FRIED M, 1996, THIN SOLID FILMS, V276, P2223
[6]   Morphology, structure, chemical composition, and light emitting properties of very thin anodic silicon films fabricated using short single pulses of current [J].
Gardelis, S. ;
Nassiopoulou, A. G. ;
Petraki, F. ;
Kennou, S. ;
Tsiaoussis, I. ;
Frangis, N. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)
[7]   Ultra-thin films with embedded Si nanocrystals fabricated by electrochemical dissolution of bulk crystalline Si in the transition regime between porosification and electropolishing [J].
Gardelis, Spiros ;
Tsiaoussis, Ioannis ;
Frangis, Nikolaos ;
Nassiopoulou, Androula G. .
NANOTECHNOLOGY, 2007, 18 (11)
[8]   Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation [J].
Herzinger, CM ;
Johs, B ;
McGahan, WA ;
Woollam, JA ;
Paulson, W .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3323-3336
[9]   OPTICAL FUNCTIONS OF CHEMICAL-VAPOR-DEPOSITED THIN-FILM SILICON DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY [J].
JELLISON, GE ;
CHISHOLM, MF ;
GORBATKIN, SM .
APPLIED PHYSICS LETTERS, 1993, 62 (25) :3348-3350
[10]   Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth [J].
Johs, B ;
Herzinger, CM ;
Dinan, JH ;
Cornfeld, A ;
Benson, JD .
THIN SOLID FILMS, 1998, 313 :137-142