Fabrication and characterization of NbN/AlN/NbN junction on MgO(001) and AlN/NbN bilayer on MgO(111) substrates

被引：10

作者：

Wu, PH ^{[1
]}

Kang, L ^{[1
]}

Chen, YJ ^{[1
]}

Sun, J ^{[1
]}

Chen, J ^{[1
]}

Zhao, SQ ^{[1
]}

机构：

[1] Nanjing Univ, Dept Elect Sci & Engn, Res Inst Superconductor Elect, Nanjing 210093, Peoples R China

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2005年 / 15卷 / 02期

关键词：

crystalline structure; NbN; SIS junction; thin film;

D O I：

10.1109/TASC.2005.849756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using direct current (DC) or radio frequency (RF) magnetron sputtering techniques, NbN/AlN/NbN junctions or AlN/NbN bilayers are prepared on single crystal MgO (001) or MgO (111) substrates respectively, both at ambient substrate temperatures. The crystalline structures of such multilayers are characterized layer-by-layer using X-ray diffraction and transmission electron microscopy (TEM). Interestingly, the AlN barrier in NbN/AlN/NbN/ MgO (001) is amorphous while the NbN/AlN/NbN/MgO (111) is single-crystalline with (001) orientation. The electrical properties of these two structures are compared. Also discussed are the DC and high frequency behavior of NbN/AlN/NbN/ MgO (001) junction.

引用

页码：209 / 211

页数：3

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