A low-loss double-tuned transformer

被引：10

作者：

Galbraith, Christopher J. ^{[1
]}

Hancock, Timothy M.

Rebeiz, Gabriel M.

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA

[2] MIT, Lincoln Lab, Analog Device Technol Grp, Lexington, MA 02420 USA

[3] Univ Calif San Diego, Dept Elect Engn & Comp Sci, La Jolla, CA 92093 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 11期

关键词：

planar microwave transformer;

D O I：

10.1109/LMWC.2007.908045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present a state-of-the-art, planar double-tuned transformer using high-Q, micromachined spiral inductors and integrated capacitors. This circuit provides a 4:1 impedance transformation over a 30% bandwidth centered at 4.06 GHz, with a minimum insertion loss of 1.50 dB. The fabricated circuit occupies a total area of 440 x 500 mu m(2) and finds application in power amplifier and other matching applications. An accurate lumped-element circuit model and design tradeoffs are presented. We believe this is the first implementation of a planar microwave double-tuned transformer.

引用

页码：772 / 774

页数：3