Annealing induced AgInSe2 formation from Ag/In/Ag/In multilayer film for solar cell absorbing layer

被引：26
作者：
Panda, R. [1 ]
Panda, M. [2 ]
Rath, H. [3 ]
Singh, U. P. [4 ]
Naik, R. [1 ]
Mishra, N. C. [1 ]
机构：
[1] Utkal Univ, Dept Phys, VaniVihar, Bhubaneswar 751004, Orissa, India
[2] IGCAR, Kalpakkam 603102, Tamil Nadu, India
[3] Inst Phys, Bhubaneswar 751001, Odisha, India
[4] KIIT Univ, Bhubaneswar 751024, Odisha, India
来源：
OPTICAL MATERIALS | 2018年 / 84卷
关键词：
Thin film; Silver indium selenide; Optical properties; Annealing; Electrical property; ELECTRICAL-PROPERTIES; VIBRATIONAL PROPERTIES; OPTICAL-PROPERTIES; METAL PRECURSOR; THIN-FILMS; SILVER; AG2SE; SELENIZATION; DIFFUSION;
D O I：
10.1016/j.optmat.2018.07.049
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In the present study, the AgInSe2 (AIS) thin films 500 nm in thickness were prepared by selenization of the Ag/In/Ag/In multilayer deposited by DC magnetron sputtering. The selenization was carried out at 250 degrees C and was followed by annealing at 450 degrees C, 475 degrees C and 500 degrees C. The selenized and annealed films were characterized by grazing incidence X-ray diffraction (GIXRD), UV-Visible-NIR spectroscopy, Field-Emission Scanning Electron Microscopy (FESEM) and Raman spectroscopy. The XRD analysis revealed the formation of the desired AgInSe2 phase along with Ag2Se (AS) impurity phase. The impurity Ag-2 Se phase is being diminished at higher annealing temperature (500 degrees C) resulting the formation of AgInSe2 phase. The super ionic nature of alpha-Ag2Se phase facilities the diffusion of Ag ion with its neighbouring tetrahedral sites. The low band gap Ag2Se impurity phase suppression by annealing at 500 degrees C lead to optical band gap increase. The Raman spectrum shows individual AgInSe2 and Ag-2 Se peaks and also the overlapping of these two phases. The Ag2Se peaks are vanished after annealing. The EDXRF study revealed that the film is off-stoichiometric and exhibit n-type conductivity. The RBS analysis indicates the diffusion of the film material to the glass substrate. From Hall measurement it is confirmed that the film shows n-type conductivity and the resistivity decreases with increasing the annealing temperature.
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页码：618 / 624
页数：7
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