Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

被引：22

作者：

Wen, H. -C. ^{[1
]}

Song, S. C. ^{[1
]}

Park, C. S. ^{[1
]}

Burham, C. ^{[5
]}

Bersuker, G. ^{[1
]}

Choi, K. ^{[1
]}

Quevedo-Lopez, M. A. ^{[2
]}

Ju, B. S. ^{[1
]}

Alshareef, H. N. ^{[2
]}

Niimi, H. ^{[2
]}

Park, H. B. ^{[3
]}

Lysaght, P. S. ^{[1
]}

Majhi, P. ^{[4
]}

Lee, B. H. ^{[1
]}

Jammy, R. ^{[1
]}

机构：

[1] SEMATECH, 2706 Montopolis Dr, Austin, TX 78741 USA

[2] Texas Instruments Inc, Austin, TX USA

[3] SAMSUNG, Austin, TX USA

[4] Intel, Austin, TX USA

[5] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (similar to 5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (V,) of similar to -0.35V, an equivalent oxide thickness (EOT)similar to 1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.

引用

页码：160 / +

页数：2

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