Large-signal linearity in III-N MOSDHFETs

被引：34
作者：
Tarakji, A [1 ]
Fatima, H
Hu, X
Zhang, JP
Simin, G
Khan, MA
Shur, MS
Gaska, R
机构：
[1] SET Inc, Columbia, SC 29209 USA
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[3] Rensselaer Polytech Inst, Ctr Broadband Data Transport Sci & Technol, Troy, NY 12180 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 06期
关键词：
AlGaN; FET; GaN; heterostructure FET (HFET); large signal; MOS-HFET; microwave;
D O I：
10.1109/LED.2003.813355
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the output RF signal distortions in the novel SiO2-AlGaN-InGaN-GaN metal-oxide-semiconductor double heterostructure FET (MOSDHFET) device structure. Their, comparative studies of MOSDHFETs and Schottky gate type DHFETs fabricated on the same wafer show significantly improved RF output signal linearity in MOSDHFETs at high-input signals. At the RF output powers close to saturation, the relative level of the second and third harmonic powers in MOSDHFETs was found to be less than -30 dB, which is about 15-20 dB lower as compared to identical geometry DHFET. This improvement is attributed to a better linearity of the MOSDHFET current-gate voltage characteristics.
引用
收藏
页码：369 / 371
页数：3
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