Room temperature emission in narrow (14nm) Cd0.35Zn0.65Se/ZnSe quantum wires with strong lateral confinement effects

被引:6
作者
Bacher, G
Illing, M
Spiegel, R
Kummell, T
Herz, K
Forchel, A
Jobst, B
Hommel, D
Landwehr, G
机构
[1] Technische Physik, Universität Würzburg, D-97074 Würzburg, Am Hubland
[2] Experimentelle Physik III, Universität Würzburg, D-97074 Würzburg, Am Hubland
[3] Inst. für Festkörperphysik, Universität Bremen, D-28334 Bremen
关键词
D O I
10.1016/0022-0248(95)00717-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have fabricated deep etched Cd0.35Zn0.65Se/ZnSe quantum wires with lateral extensions down to 14 nm. The wires were defined by electron beam lithography and a low damage wet chemical etch process. Time-integrated and time-resolved photoluminescence spectroscopy was used to study excitonic properties in ultranarrow wide bandgap quantum wires, Lateral quantization causes a blue shift of the photoluminescence emission of up to 17 meV with respect to the 2D reference. A low temperature (T = 2 K) lifetime of about 110 ps was found, almost independent of the wire width, At room temperature, non-radiative sidewall recombination reduces the exciton lifetime from 330 ps for the 2D reference to about 21 ps in the case of a 28 nm wide wire.
引用
收藏
页码:455 / 458
页数:4
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