One-dimensional Si-in-Si(001) template for single-atom wire growth

被引：11

作者：

Owen, J. H. G. ^{[1
]}

Bianco, F. ^{[1
]}

Koester, S. A. ^{[1
]}

Mazur, D. ^{[1
]}

Bowler, D. R. ^{[2
,3
]}

Renner, Ch. ^{[1
]}

机构：

[1] Univ Geneva, Dept Condensed Matter Phys, NCCR MaNEP, CH-1211 Geneva 4, Switzerland

[2] UCL, Dept Phys & Astron, London WC1E 6BT, England

[3] London Ctr Nanotechnol, London WC1H 0AH, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 09期

基金：

瑞士国家科学基金会;

关键词：

SURFACES; NANOSTRUCTURES; SI(001); NANOWIRES; INDIUM;

D O I：

10.1063/1.3483164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We present atomic-resolution scanning tunneling microscope data of a silicon-only template, which modeling predicts to enable the self-organized growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one-dimensional, defect-free Si reconstruction four dimers wide the Haiku core-formed by hydrogenation of self-assembled Bi-nanolines on Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to,vicinal surfaces for nanoscale patterning. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483164]

引用

页数：3

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