A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications

被引:4
作者
Yuan, Zhao [1 ]
Emon, Asif Imran [2 ]
Huang, Si [1 ]
Wang, Zhongjing [1 ]
Wang, Yalin [1 ]
Hassan, Mustafeez [2 ]
Narayanasamy, Balaji [1 ]
Deshpande, Amol [1 ]
Luo, Fang [2 ]
机构
[1] Univ Arkansas, Elect Engn, Fayetteville, AR 72701 USA
[2] SUNY Stony Brook, Elect & Comp Engn, Stony Brook, NY USA
来源
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021) | 2021年
基金
美国国家科学基金会;
关键词
SiC MOSFET; three-level; power module; power density; stray inductance; hybrid packaging; PCB;
D O I
10.1109/APEC42165.2021.9487258
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Three-level T-type neutral-point-clamped converters (3L-TNPC) are widely used in motor drive and PV applications because of the higher efficiency, improved output THD, and lower common-mode noise. But such topology suffers from high stray inductance because of the complicated power loop structure. This paper proposes a SiC-MOSFET based 3L-TNPC power module with a hybrid packaging method. The module has a printed circuit board (PCB) directly soldered on top of direct bounding copper (DBC), with bare dies soldered on DBC and connecting to PCB by bonding wires. Such a structure allows the power loop on both DBC and PCB. This reduces stray inductance through enhanced mutual-inductance cancellation. The introduced PCB can provide extra flexibility in gate-loop optimization, enabling synchronous gate drive between parallel dies. The heat from dies can also be directly dissipated through DBC and the proposed direct-soldered coldplate. A 1.2 kV, 400 A SiC 3L-TNPC module is fabricated with measured loop inductance of 2.5 nH. Faster driving speed by using 0.33 Omega gate resistance is enabled to reduce switching loss. Eventually, double-pulse tests and continuous tests are carried out to evaluate the module.
引用
收藏
页码:27 / 32
页数:6
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