Lithographic characterization of improved projection optics in the EUVL engineering test stand

被引：11

作者：

O'Connell, DJ ^{[1
]}

Lee, SH ^{[1
]}

Ballard, WP ^{[1
]}

Tichenor, DA ^{[1
]}

Bernardez, LJ ^{[1
]}

Haney, SJ ^{[1
]}

Johnson, TA ^{[1
]}

Barr, PK ^{[1
]}

Leung, AH ^{[1
]}

Jefferson, KL ^{[1
]}

Replogle, WC ^{[1
]}

Goldsmith, JEM ^{[1
]}

Chapman, HN ^{[1
]}

Naulleau, P ^{[1
]}

Wurm, S ^{[1
]}

Panning, E ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2 | 2003年 / 5037卷

关键词：

EUVL; extreme ultraviolet; lithography; projection optics box; aerial image contrast; flare; laser-produced plasma;

D O I：

10.1117/12.484967

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Static and scanned images of 100-nm dense features using a developmental set of lambda/14 projection optics, POB1, were successfully obtained in the Engineering Test Stand (ETS) with various laser produced plasma (LPP) source powers last year. The ETS with POB1 has been used to understand initial system performance and to provide lithographic learning. Since then, numerous system upgrades have been made to improve ETS lithographic performance to meet or exceed the original design objectives. The most important upgrade has been the replacement of POB1 with an improved projection optics system. POB2. having lower figure error (lambda/20 rms wavefront error) and lower flare. Both projection optics boxes are a four-mirror design with a 0.1 numerical aperture. Scanned 70-nm dense features have been successfully printed using POB2. Aerial image contrast measurements have been made using the resist clearing method. The results are in good agreement to previous POB2 aerial image contrast measurements at the subfield exposure station (SES) at Lawrence Berkley National Laboratory. For smaller features the results deviate from the modeling predictions due to the inherent resolution limit of the resist. The intrinsic flare of POB2 was also characterized. The experimental results were in excellent agreement with modeling predictions. As predicted, the flare in POB2 is less than 20% for 2 mum features, which is two times lower than the flare in POB1. EUV flare is much easier to compensate for than its DUV counterpart due to its greater degree of uniformity and predictability. The lithographic learning obtained from the ETS will be used in the development of EUV High Volume Manufacturing tools. This paper describes the ETS tool setup, both static and scanned, that was required after the installation of POB2. The paper will also describe the lithographic characterization of POB2 in the ETS and compare those results to the lithographic results obtained last year with POB1.

引用

页码：83 / 94

页数：12

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