A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

被引：26

作者：

Ko, Jieun ^{[1
]}

Lee, Su Jeong ^{[2
]}

Kim, Kyongjun ^{[1
]}

Lee, EungKyu ^{[1
]}

Lim, Keon-Hee ^{[1
]}

Myoung, Jae-Min ^{[2
]}

Yoo, Jeeyoung ^{[1
]}

Kim, Youn Sang ^{[1
,3
]}

机构：

[1] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Program Nano Sci & Technol, Seoul 151742, South Korea

[2] Yonsei Univ, Dept Adv Mat Engn, Seoul 120749, South Korea

[3] Adv Inst Convergence Technol, Suwon 443270, Gyeonggi Do, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; LOW-TEMPERATURE FABRICATION; LOW-VOLTAGE; ORGANIC TRANSISTORS; BETA-ALUMINA; DOPED ZNO; SOL-GEL; TRANSPARENT; DIELECTRICS; CAPACITANCE;

D O I：

10.1039/c5tc00067j

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 degrees C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of similar to 2 mu F cm(-2) and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of similar to 3.3 cm(2) V-1 s(-1) at a gate bias of 3 V.

引用

页码：4239 / 4243

页数：5

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