Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films

被引:8
作者
Franta, Daniel [1 ]
Hrdlicka, Martin [2 ]
Necas, David [1 ]
Frumar, Miloslav [2 ]
Ohlidal, Ivan [1 ]
Pavlista, Martin [2 ]
机构
[1] Masaryk Univ, Fac Sci, Dept Phys Elect, Kotlarska 2, CS-61137 Brno, Czech Republic
[2] Univ Pardub, Res Ctr & Dept Gen & Inorg Chem, CZ-53210 Pardubice, Czech Republic
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 5 | 2008年 / 5卷 / 05期
关键词
D O I
10.1002/pssc.200777768
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.
引用
收藏
页码:1324 / +
页数:2
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