Semiconductor gas sensor based on Pd-doped SnO2 nanorod thin films

被引：146
作者：
Lee, Y. C. [1 ]
Huang, Hui [1 ]
Tan, O. K. [1 ]
Tse, M. S. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Sensors & Actuators Lab, Singapore 639798, Singapore
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 132卷 / 01期
关键词：
SnO2; nanorod thin film; Pd doping; gas sensing;
D O I：
10.1016/j.snb.2008.01.028
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
SnO2 nanorod thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) with postplasma. treatment. The SnO2 nanorod thin films were surface modified with Pd nanoparticles and their sensing properties towards H-2 and ethanol gas were studied. It was found that the Pd-doped SnO2 nanorod thin film sensor exhibits 6 and 2.5 times better response to 1000 ppm H-2 and ethanol at 300 degrees C compared to the un-doped sample. The improved gas-sensing properties were believed to result from the formation of electron depletion layer and enhanced catalytic dissociation of molecular adsorbates on the Pd nanoparticle surfaces. (C) 2008 Elsevier B.V. All rights reserved.
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收藏
页码：239 / 242
页数：4
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