Spectroscopic observation of strain-assisted TC enhancement in EuO upon Gd doping

被引:12
作者
Altendorf, S. G. [1 ,2 ]
Hollmann, N. [2 ]
Sutarto, R. [1 ]
Caspers, C. [1 ]
Wicks, R. C. [3 ]
Chin, Y. -Y. [1 ,2 ]
Hu, Z. [1 ,2 ]
Kierspel, H. [1 ]
Elfimov, I. S. [3 ]
Hsieh, H. H. [4 ]
Lin, H. -J. [5 ]
Chen, C. T. [5 ]
Tjeng, L. H. [1 ,2 ]
机构
[1] Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany
[2] Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany
[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada
[4] Natl Def Univ, Chung Cheng Inst Technol, Tao Yuan 335, Taiwan
[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 08期
关键词
FERROMAGNETIC SEMICONDUCTOR EUO; DOPED EUO; EUROPIUM CHALCOGENIDES; FILMS; EXCHANGE; PRESSURE;
D O I
10.1103/PhysRevB.85.081201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The origin of the Curie temperature enhancement of EuO upon Gd doping is studied by using soft x-ray absorption spectroscopy on epitaxial pure and Gd-doped EuO thin films. Temperature-and doping-dependent changes in the oxygen K edge spectra provide information about the correlation of magnetism and lattice. Band-structure calculations reveal that these spectral changes as well as the increase of the Curie temperature to 125 K for Gd-doped EuO cannot be explained by electron doping alone. The compression of the crystal lattice due to the incorporation of the smaller Gd3+ ions plays also an important role.
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页数:4
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