Modeling MOSFET surface capacitance behavior under non-equilibrium

被引：2

作者：

Kapoor, A ^{[1
]}

Jindal, RP ^{[1
]}

机构：

[1] Univ Louisiana, William Hansen Hall Dept Elect & Comp Engn, Lafayette, LA 70504 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 06期

关键词：

capacitance modeling; MOSFET; non-equilibrium;

D O I：

10.1016/j.sse.2005.03.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A normalized analytical solution for the capacitance associated with a MOSFET surface under non-equilibrium conditions is presented. It is shown that this model can be mapped into an equivalent equilibrium problem with 98% accuracy for near intrinsic samples (U-B congruent to 2). The precision becomes even better for highly doped semiconductors. The physics behind this transformation is explained and nomograms generated to present data in a highly normalized form. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：976 / 980

页数：5

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