Performance Analysis of Double Gate Junctionless Tunnel Field Effect Transistor: RF Stability Perspective

被引：0

作者：

Raju, Veerati ^{[1
]}

Sivasankaran, K. ^{[1
]}

机构：

[1] VIT Univ, Sch Elect Engn, Vellore 632014, Tamil Nadu, India

来源：

INTERNATIONAL JOURNAL OF ADVANCED COMPUTER SCIENCE AND APPLICATIONS | 2019年 / 10卷 / 11期

关键词：

Junctionless tunnel FET; band to band tunnelling; High-k; RF stability; critical frequency; FET; OPTIMIZATION; VARIABILITY; GEOMETRY; MOSFETS; GAIN;

D O I：

10.14569/IJACSA.2019.0101172

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper investigates the RF Stability performance of the Double Gate Junctionless Tunnel Field Effect Transistor (DGJL-TFET). The impact of the geometrical parameter, material and bias conditions on the key figure of merit (FoM) like Transconductance (g(m)), Gate capacitance (C-gg) and RF parameters like Stern Stability Factor (K), Critical Frequency (f(k)) are investigated. The analytical model provides the relation between f(k) and small signal parameters which provide guidelines for optimizing the device parameter. The results show improvement in ON current, g(m), f(t) and f(k) for the optimized device structure. The optimized device parameters provide guidelines to operate DGJL-TFET for RF applications.

引用

页码：529 / 537

页数：9

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