Simultaneous in situ measurements of x-ray reflectivity and optical spectroscopy during organic semiconductor thin film growth

被引：27

作者：

Hosokai, T. ^{[1
]}

Gerlach, A. ^{[1
]}

Hinderhofer, A. ^{[1
]}

Frank, C. ^{[1
]}

Ligorio, G. ^{[1
]}

Heinemeyer, U. ^{[1
]}

Vorobiev, A. ^{[2
]}

Schreiber, F. ^{[1
]}

机构：

[1] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany

[2] ESRF, F-38043 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期

关键词：

organic semiconductors; semiconductor thin films; X-ray reflection; PHTHALOCYANINE; F16CUPC;

D O I：

10.1063/1.3478450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Simultaneous in situ real-time measurements of x-ray reflectivity and differential reflectance spectroscopy were conducted during deposition of perfluorinated copper-phthalocyanine thin films on SiO2/Si. We found a continuous spectral change coinciding with structural changes from submonolayer coverage, to standing beta(bilayer)-phase and to beta-phase for thicker films. This combined measurement enables us to study the relationship between structural and optical properties of organic semiconductor thin films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478450]

引用

页数：3

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