Derived distribution for electrical overstress failure thresholds of transistors

被引：3

作者：

Wheless, WP ^{[1
]}

Wurtz, LT ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 21期

关键词：

D O I：

10.1049/el:19981418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical overstress lailure may be analysed as a manifestation of plasma instabilities in semiconductors. The alternative Wunsch-Bell thermal paradigm is also useful for practical failure modelling, and is the basis for the derivation of the new probability density function presented.

引用

页码：2063 / 2064

页数：2

共 7 条

[1] STATISTICAL VARIATIONS IN FAILURE THRESHOLDS OF SILICON NPN TRANSISTORS SUBJECTED TO ELECTRICAL OVERSTRESS [J].

ALEXANDER, DR ;

ENLOW, EW ;

KARASKIEWICZ, RJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1680-1687

[2]

Maissel L.I., 1970, HDB THIN FILM TECHNO

[3]

PIENKE J, 1992, ENCOUNTER CHAOS SELF

[4]

POZEHLA J, 1991, PLASMA CURRENT INSTA

[5]

POZEHLA J, 1988, APPL PHYS A, V48, P181

[6]

WEIBULL W, 1951, J APPL MECH-T ASME, V18, P293

[7] DETERMINATION OF THRESHOLD FAILURE LEVELS OF SEMICONDUCTOR DIODES AND TRANSISTORS DUE TO PULSE VOLTAGES [J].

WUNSCH, DC ;

BELL, RR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :244-+

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