OFF-State-Stress-Induced Ins ability in Switching Polycrystalline Silicon Thin-Film Transistors and Its Improvement by a Bridged-Grain Structure

被引：10

作者：

Zhang, Meng ^{[1
,2
]}

Yan, Yan ^{[1
]}

Li, Guijun ^{[1
,2
]}

Deng, Sunbin ^{[2
]}

Zhou, Wei ^{[2
]}

Chen, Rongsheng ^{[2
]}

Wong, Man ^{[2
]}

Kwok, Hoi-Sing ^{[2
]}

机构：

[1] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China

[2] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 11期

基金：

中国国家自然科学基金;

关键词：

OFF-state stress; switching polycrystalline silicon thin-film transistors; dynamic hot carrier effect; bridged grain; INDUCED DEGRADATION; BEHAVIORS; TFTS;

D O I：

10.1109/LED.2018.2872350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, an off-state stress is proposed to simulate the operation conditions of switching polycrystalline thin-film transistors in active-matrix displays for the first time. A dynamic hot carrier (HC) effect, dependent on data pulse falling time, dominates the device degradation. Incorporated with the transient simulations, the device degradation mechanism is tentatively discussed. Finally, a bridged-grain structure, which can effectively shares the stress voltage drop via multiple reverse junctions, is employed to relieve such off-state-stress-induced dynamic HC degradation.

引用

页码：1684 / 1687

页数：4

共 15 条

[11] Significant Reduction of Dynamic Negative Bias Stress-Induced Degradation in Bridged-Grain Poly-Si TFTs [J].