GaAs detectors irradiated by electrons at different dose rates

被引：8

作者：

Sagatova, A. ^{[1
,2
]}

Zatko, B. ^{[3
]}

Sedlackova, K. ^{[1
]}

Pavlovic, M. ^{[1
]}

Fulop, M. ^{[2
]}

Bohacek, P. ^{[3
]}

Necas, V. ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Nucl & Phys Engn, SK-81219 Bratislava, Slovakia

[2] Slovak Med Univ, Univ Ctr Electron Accelerators, Trencin 91106, Slovakia

[3] Slovak Acad Sci, Inst Elect Engn, SK-81404 Bratislava, Slovakia

来源：

JOURNAL OF INSTRUMENTATION | 2014年 / 9卷

关键词：

Radiation damage to detector materials (solid state); Solid state detectors; Radiation hard detectors; HOLE PAIR; ENERGY; SILICON;

D O I：

10.1088/1748-0221/9/12/C12050

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation hardness of Semi-Insulating (SI) GaAs detectors against high-energy electrons was investigated. The detectors were irradiated by 5MeV electrons. The influence of two irradiation parameters, the total absorbed dose (up to 24 kGy) and the applied dose rate (20, 40 and 80 kGy/h), on their spectrometric properties was studied. An Am-241 gamma-ray source was used to evaluate the spectrometric properties. The applied dose has negatively affected the detector CCE (Charge Collection Efficiency) and has influenced also the energy resolution. Nevertheless, a global increase of detection efficiency with the dose was observed. Three different dose rates used during irradiation did not affect the CCE, but in the range of doses from 4 to 16 kGy an influence of the applied dose rate upon two other parameters was observed. With higher dose rates, a steeper increase in the detection efficiency and significant worsening of energy resolution were achieved.

引用

页数：8

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