Temperature dependence of current gain in 4H-SiC bipolar junction transistors

被引：7

作者：

Asada, Satoshi ^{[1
]}

Okuda, Takafumi ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 04期

关键词：

ON-RESISTANCE; SIC BJTS; DEVICES;

D O I：

10.7567/JJAP.54.04DP13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of current gain from 140 to 460K in 4H-SiC bipolar junction transistors (SiC BJTs) was investigated. The current gain increased from 110 to 1200 with decreasing temperature from 460 to 200 K. The high current gain at the low temperature can be ascribed to the enhanced incomplete ionization of aluminum acceptors in the base layer, resulting in the increase in injection efficiency. However, when the temperature was further reduced from 200 to 140 K, the current gain decreased from 1200 to 515, which is caused by high injection condition in the base layer, because of a very low hole concentration below 200 K. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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